IEEE Transactions on Electron Devices · 2016 · 203 citations · 15 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDielectric PropertiesElectrical CharacterizationFerroelectric MaterialsMetal-oxide-semiconductor Field-effect TransistorsFerroelectric Field-effect TransistorsFerroelectric PropertiesFerroelectric Thin FilmsFerroelectricityGate Oxide InterfacesNegative Capacitance Field-effect Transistors
We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim \pm 3$ </tex-math></inline-formula> %) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (≤5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.
15
Enhancement of Ferroelectricity in Strained BaTiO <sub>3</sub> Thin Films
Kyoung Jin Choi, Michael D. Biegalski, Yulan Li et al. · Science · 2004 · 1.9K citations
Natural Sciences, Materials Engineering, Materials Science +17
Ferroelectricity in Simple Binary ZrO<sub>2</sub> and HfO<sub>2</sub>
Johannes Müller, T. S. Böscke, U. Schröder et al. · Nano Letters · 2012 · 1.7K citations
Negative capacitance in a ferroelectric capacitor
Asif Islam Khan, Korok Chatterjee, Brian Wang et al. · Nature Materials · 2014 · 780 citations