Journal of Materials Chemistry C · 2023 · 33 citations · 54 references
Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringO 3Applied PhysicsPower Semiconductor DeviceGallium OxideHeterojunction RectifiersTemperature Range
NiO/Ga 2 O 3 heterojunction rectifiers were measured over a temperature range up to 600 K and found to exhibit a near-temperature independent breakdown voltage of >7 kV, far in excess of previous Schottky rectifier results.
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Ultra-wide bandgap semiconductor Ga2O3 power diodes
Jincheng Zhang, Pengfei Dong, Kui Dang et al. · Nature Communications · 2022 · 562 citations · Full text
β-Gallium oxide power electronics
Andrew J. Green, James S. Speck, Grace Xing et al. · APL Materials · 2022 · 462 citations · Full text
Wide-bandgap Semiconductor, Engineering, Power Electronic Systems +17
Masataka Higashiwaki, Keita Konishi, Kohei Sasaki et al. · Applied Physics Letters · 2016 · 336 citations