Chao-Ching Chiang

Demonstration of 4.7 kV breakdown voltage in NiO/<b> <i>β</i> </b>-Ga2O3 vertical rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia et al. · Applied Physics Letters · 2022 · 95 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Breakdown up to 13.5 kV in NiO/β-Ga₂O₃ Vertical Heterojunction Rectifiers

Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang et al. · ECS Journal of Solid State Science and Technology · 2024 · 58 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +8

Annealing temperature dependence of band alignment of NiO/<i>β</i>-Ga₂O₃

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang et al. · Journal of Physics D Applied Physics · 2022 · 41 citations

Superior high temperature performance of 8 kV NiO/Ga₂O₃vertical heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia et al. · Journal of Materials Chemistry C · 2023 · 33 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +7

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <i>μ</i>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2023 · 30 citations

Wide-bandgap Semiconductor, Engineering, Nio Parameters +16