Noise and linearity analysis of recessed-source/drain junctionless Gate All Around (Re-S/D-JL-GAA) MOSFETs for communication systems

An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design

Pujarini Ghosh, Subhasis Haldar, R.S. Gupta et al. · IEEE Transactions on Electron Devices · 2012 · 179 citations

Engineering, Electrical Engineering, Circuit Theory +16

A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETs

Te‐Kuang Chiang · IEEE Transactions on Electron Devices · 2012 · 158 citations

Engineering, Electrical Engineering, Electronic Materials +16

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

C. Sanabria, A. Chakraborty, Hongtao Xu et al. · IEEE Electron Device Letters · 2005 · 114 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%

Mostafa Masnadi‐Shirazi, Ryan B. Lewis, Vahid Bahrami-Yekta et al. · Journal of Applied Physics · 2014 · 62 citations

Natural Sciences, Materials Science, Physics +17

Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs

Boris Sviličić, Vladimir Jovanović, Tomislav Suligoj · Solid-State Electronics · 2009 · 57 citations

Engineering, Electrical Engineering, Microelectronics +15