Hongtao Xu

The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

C. Sanabria, A. Chakraborty, Hongtao Xu et al. · IEEE Electron Device Letters · 2005 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application

Hongtao Xu, Yorgos Palaskas, Ashoke Ravi et al. · IEEE Journal of Solid-State Circuits · 2011 · 98 citations

Low-power Electronics, Electrical Engineering, Wlan Application +12

A C-band high-dynamic range GaN HEMT low-noise amplifier

Hongtao Xu, C. Sanabria, Alessandro Chini et al. · IEEE Microwave and Wireless Components Letters · 2004 · 87 citations · Full text

Electrical Engineering, Engineering, Rf Semiconductor +9

A 2.4-GHz 20–40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS

Ashoke Ravi, Paolo Madoglio, Hongtao Xu et al. · IEEE Journal of Solid-State Circuits · 2012 · 85 citations

Wide Ofdm, Multi-carrier Communication, Radio Frequency +8

A Transformer-Combined 31.5 dBm Outphasing Power Amplifier in 45 nm LP CMOS With Dynamic Power Control for Back-Off Power Efficiency Enhancement

Wei Tai, Hongtao Xu, Ashoke Ravi et al. · IEEE Journal of Solid-State Circuits · 2012 · 84 citations

Electrical Engineering, Engineering, Power Ic +12