IEEE Microwave and Wireless Components Letters · 2004 · 87 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDynamic RangeGainGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersLow-noise AmplificationLow-noise AmplifiersNoise FigureNoise Figure Measurement
A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.
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2.1 A/mm current density AlGaN/GaN HEMT
Alessandro Chini, R. Coffie, Gaudenzio Meneghesso et al. · Electronics Letters · 2003 · 43 citations · Full text
High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs
P. Parikh, Yifeng Wu, M. Moore et al. · 2003 · 32 citations
Engineering, Electrical Engineering, Electronic Materials +16
High-frequency noise in AlGaN/GaN HFETs
S. Nuttinck, E. Gebara, J. Laskar et al. · IEEE Microwave and Wireless Components Letters · 2003 · 24 citations