IEEE Microwave and Wireless Components Letters · 2003 · 24 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ModelingNoise In Electronic DevicesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice Noise CharacterizationGallium Nitride (Gan) MaterialsGan-based High-frequency DevicesLow-frequency NoiseNoise In High-frequency Semiconductor DevicesNoise Parameter ExtractionNoise ParametersSemiconductor Noise
We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies.
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