IEEE Electron Device Letters · 2005 · 114 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingNoise In Semiconductor DevicesNoise PredictionWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesDevice Noise CharacterizationGate LeakageGate Leakage CurrentHigh-electron-mobility TransistorsNoise FigureNoise Figure MeasurementNoise In Field-effect TransistorsTransistor Noise
The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.
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Analysis and Design of Analog Integrated Circuits
W.R. Betts · Electronics and Power · 1978 · 3.8K citations
30-W/mm GaN HEMTs by Field Plate Optimization
Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations