Energy band offsets of BeO dielectrics grown via atomic-layer deposition on β-Ga2O3 substrates

Band offsets of wide-band-gap oxides and implications for future electronic devices

John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations

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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

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Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface Potentials

E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations

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Power semiconductor device figure of merit for high-frequency applications

B. Jayant Baliga · IEEE Electron Device Letters · 1989 · 1K citations

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On the bulk β-Ga2O3 single crystals grown by the Czochralski method

Zbigniew Galazka, K. Irmscher, Reinhard Uecker et al. · Journal of Crystal Growth · 2014 · 653 citations

Natural Sciences, Materials Engineering, Materials Science +14