Applied Physics Letters · 2022 · 12 citations · 18 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsSemiconductor MaterialsSpectroscopyDefect CharacterizationDefectsDefects In Electronic MaterialsRadiation Damage In MaterialsRadiation SpectroscopySemiconductor DefectsDeep-level DefectsElectron Beam Irradiation EffectsInterstitial DefectsLow-energy Electron BeamsLow-energy Electron SpectroscopyRadiation-induced DefectsSilicon CarbideSilicon Carbide (Sic) Materials
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects. We propose that EH1 and EH3 are identical to M1 and M3, also recently assigned to carbon interstitial defects, and assign them to Ci=(h) and Ci0 (h), respectively.
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Coherent control of single spins in silicon carbide at room temperature
Matthias Widmann, Sang‐Yun Lee, Torsten Rendler et al. · Nature Materials · 2014 · 659 citations · Full text