Concepedia

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Sabria Benrabah, Maxime Legallais, P. Besson, Simon Ruel, Laura Vauche, Bernard Pélissier, Chloé Thieuleux, B. Salem, Matthew Charles

Applied Surface Science · 2021 · 27 citations · 34 references

Open access

Concepts

Materials EngineeringMaterials ScienceChemical EngineeringEngineeringH3po4-based Wet ChemicalSurface ScienceApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorPlasma EtchingSurface Processing

References

34

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Edward A. Jones, Fred Wang, Daniel Costinett · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2016 · 1.1K citations

Electrical Engineering, Engineering, Power Device +11

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 801 citations

Gallium Oxide, Gallium Nitride Epitaxy, Applied Physics +1

Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

Dongsheng Li, Masatomo Sumiya, Shunro Fuke et al. · Journal of Applied Physics · 2001 · 346 citations

Materials Science, Semiconductors, Selective Etching +14

Cleaning of AlN and GaN surfaces

Sean W. King, J. P. Barnak, M. D. Bremser et al. · Journal of Applied Physics · 1998 · 299 citations

Materials Science, Materials Engineering, Chemical Engineering +13

Study of oxygen chemisorption on the GaN(0001)-(1×1) surface

V. M. Bermudez · Journal of Applied Physics · 1996 · 278 citations

Engineering, Surface Analysis, Surface Science +11