Bernard Pélissier

Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V

Fabien Piallat, V. Beugin, R. Gassilloud et al. · Applied Surface Science · 2014 · 39 citations

Engineering, Materials Engineering, Materials Science +16

Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme

R. Vallat, R. Gassilloud, O. Salicio et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2019 · 39 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais, H. Mehdi, Sylvain David et al. · ACS Applied Materials & Interfaces · 2020 · 36 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Chemical Bath Deposition of ZnO Nanowires Using Copper Nitrate as an Additive for Compensating Doping

Clément Lausecker, B. Salem, Xavier Baillin et al. · Inorganic Chemistry · 2021 · 31 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Sabria Benrabah, Maxime Legallais, P. Besson et al. · Applied Surface Science · 2021 · 28 citations

Engineering, Materials Engineering, Materials Science +14