Simon Ruel

Atomic layer etching of GaN using Cl2 and He or Ar plasma

Simon Ruel, Patricia Pimenta‐Barros, Frédéric Le Roux et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2021 · 30 citations

Wide-bandgap Semiconductor, Engineering, Atomic Layer Etching +17

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Sabria Benrabah, Maxime Legallais, P. Besson et al. · Applied Surface Science · 2021 · 27 citations · Full text

Materials Engineering, Materials Science, Chemical Engineering +9

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta‐Barros et al. · Energies · 2023 · 25 citations · Full text

Wide-bandgap Semiconductor, Engineering, Si Power Transistors +16

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

C. Le Royer, B. Mohamad, J. Biscarrat et al. · 2022 · 17 citations

Normally-off 650V, Mosc Hemts, Electrical Engineering +15