J. Biscarrat - Concepedia

Author

J. Biscarrat

Laboratoire d'Électronique des Technologies de l'Information

Also Known As

Biscarrat, J., Biscarrat, Jérôme, Biscarrat, Jérôme, J. Biscarrat, Jerome Biscarrat, Jérome Biscarrat, Jérôme Biscarrat

Publications

242

Citations

H-Index

Concepts

All Affiliations

Laboratoire d'Électronique des Technologies de l'Information Université Grenoble Alpes Commissariat à l'Énergie Atomique et aux Énergies Alternatives Institut polytechnique de Grenoble CEA Grenoble

About

J. Biscarrat is an author at Laboratoire d'Électronique des Technologies de l'Information specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	84
2	Applied Physics	6	6	84
3	Electrical Engineering	6	6	84
4	Materials Engineering	1	1	12
5	Materials Science	1	1	14

J. Biscarrat

Publications

133

Citations

H-Index

Page 1

	Year	Citations
Systematic Study of Anodic Etching of Highly Doped N-type 4H-SiC in Various HF Based Electrolytes Gaël Gautier, J. Biscarrat, D. Valente, Journal of The Electrochemical Society	2013	19
Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact Yannick Baines, Julien Buckley, J. Biscarrat, Scientific Reports	2017	19
Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT A. G. Viey, W. Vandendaele, M.-A. Jaud, SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2020	18
Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture C. Le Royer, B. Mohamad, J. Biscarrat, Normally-off 650VMosc HemtsElectrical EngineeringWide-bandgap SemiconductorEngineering	2022	17
Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC Xi Song, J. Biscarrat, Jean-François Michaud, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceElectrical EngineeringEngineeringN-type Implanted LayersElectrical Characterizations	2011	14
Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT A. G. Viey, W. Vandendaele, M.-A. Jaud, IEEE Transactions on Electron Devices Materials EngineeringSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2021	12
Breakdown Mechanism of AlGaN/GaN HEMT on 200-mm Silicon Substrate With Silicon Implant-Assisted Contacts Antoine Chanuel, Y. Gobil, Chuan Lun Hsu, IEEE Transactions on Electron Devices Access TechnologyWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2022	12
A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs W. Vandendaele, Simon Martin, M.-A. Jaud,	2020	11
Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function R. Kom Kammeugne, C. Leroux, J. Cluzel, Solid-State Electronics Accurate Statistical ExtractionWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2021	11

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