Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

Abstract

In this paper we present a detailed performance status of AlGaN/GaN MOS channel High Electron Mobility Transistors (MOSc HEMTs) with fully recessed gate architecture on 200mm Si substrates. We report a wide range of wafer and package level results. ON state resistance is studied through three aspects: i) RON partitioning with analysis of its four components, ii) RON temperature dependence, iii) cumulative dynamic RON under stress. For accurate power assessment we characterize packaged devices and compare the typical figures of merit (gate charge, switching tests) to state of the art references (especially pGaN gate HEMTs). We highlight the benefits offered by this technology for 650V applications, such as very low I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GSS</inf> leakage even at 150°C, and better switching performances, t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d(on)</inf> , t <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d(off)</inf> .