René Escoffier

Statistics

Publications

Citations

267

H-Index

Active since

1996

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

CEA Grenoble

Laboratoire d'Électronique des Technologies de l'Information

Université Grenoble Alpes

Institut polytechnique de Grenoble

René Escoffier is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, semiconductor devices, and electrical engineering.

ORCID

Publications per year

1996–2023

Publications

Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor

C. Brisset, V. Ferlet-Cavrois, O. Flament et al. · IEEE Transactions on Nuclear Science · 1996 · 93 citations

Engineering, Electrical Engineering, Microelectronics +16

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta‐Barros et al. · Energies · 2023 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers

Matthew Charles, Yannick Baines, Sandra Bos et al. · Journal of Crystal Growth · 2016 · 23 citations

Engineering, Materials Engineering, Materials Science +17

The single reference Bi-Directional GaN HEMT AC switch

Dominique Bergogne, Othman Ladhari, Leo Sterna Charlotte Gillot et al. · 2015 · 20 citations

Engineering, Electrical Engineering, Electronic Materials +11

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

C. Le Royer, B. Mohamad, J. Biscarrat et al. · 2022 · 17 citations

Engineering, Electrical Engineering, Materials Science +15

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