Concepedia

A. G. Viey

AG

Statistics

Publications

5

Citations

83

H-Index

5

Active since

2019

Affiliations

Institut polytechnique de Grenoble(Current)

Université Grenoble Alpes

Laboratoire d'Électronique des Technologies de l'Information

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

A. G. Viey is an author at Institut polytechnique de Grenoble specializing in engineering, microelectronics, and applied physics.

Top concepts

EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringPhysicsSingle Event EffectsSemiconductorsPower ElectronicsIntegrated CircuitsElectronic Packaging

Publications per year

2019–2022

5

Publications

5

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud et al. · 2019 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud et al. · 2020 · 18 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Normally-OFF 650V GaN-on-Si MOSc-HEMT Transistor: Benefits of the Fully Recessed Gate Architecture

C. Le Royer, B. Mohamad, J. Biscarrat et al. · 2022 · 17 citations

Normally-off 650V, Mosc Hemts, Electrical Engineering +15

Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud et al. · IEEE Transactions on Electron Devices · 2021 · 12 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +13

A Novel Insight on Interface Traps Density (Dit) Extraction in GaN-on-Si MOS-c HEMTs

W. Vandendaele, Simon Martin, M.-A. Jaud et al. · 2020 · 11 citations

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