W. Vandendaele

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Publications

Citations

193

H-Index

Active since

2015

Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives(Current)

Université Grenoble Alpes

Laboratoire d'Électronique des Technologies de l'Information

CEA Grenoble

Institut polytechnique de Grenoble

W. Vandendaele is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in electrical engineering, engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsMicroelectronicsSingle Event EffectsPhysicsPower ElectronicsPower Electronic DevicesPower DevicesSemiconductors

Publications per year

2015–2023

Publications

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud et al. · 2019 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +11

The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers

Matthew Charles, Yannick Baines, Sandra Bos et al. · Journal of Crystal Growth · 2016 · 23 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +8

The single reference Bi-Directional GaN HEMT AC switch

Dominique Bergogne, Othman Ladhari, Leo Sterna Charlotte Gillot et al. · 2015 · 20 citations

Application Engineer, Electrical Engineering, Engineering +8

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Yannick Baines, Julien Buckley, J. Biscarrat et al. · Scientific Reports · 2017 · 19 citations · Full text

Carbon-related pBTI degradation mechanisms in GaN-on-Si E-mode MOSc-HEMT

A. G. Viey, W. Vandendaele, M.-A. Jaud et al. · 2020 · 18 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

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