Substrates for gallium nitride epitaxy

Nonmetallic crystals with high thermal conductivity

Glen A. Slack · Journal of Physics and Chemistry of Solids · 1973 · 2.1K citations

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THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

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Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

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High dislocation densities in high efficiency GaN-based light-emitting diodes

S. D. Lester, F. A. Ponce, M. G. Craford et al. · Applied Physics Letters · 1995 · 961 citations

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