Y-doped HfO2 deposited by atomic layer deposition using a cocktail precursor for DRAM capacitor dielectric application

Oxygen vacancies in transition metal and rare earth oxides: Current state of understanding and remaining challenges

M. V. Ganduglia-Pirovano, Alexander Hofmann, Joachim Sauer · Surface Science Reports · 2007 · 1.2K citations

Materials Science, Rare Earth Mineral, Oxygen Vacancies +9

Stabilization of the tetragonal structure in zirconia microcrystals

R. C. Garvie · The Journal of Physical Chemistry · 1978 · 968 citations

Materials Science, Altmetrics, Engineering +12

High-K materials and metal gates for CMOS applications

John Robertson, Robert M. Wallace · Materials Science and Engineering R Reports · 2014 · 730 citations

Electrical Engineering, Engineering, Nanoelectronics +6

Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

E. P. Gusev, C. Cabral, M. Copel et al. · Microelectronic Engineering · 2003 · 307 citations

Materials Science, Electrical Engineering, Epitaxial Growth +10

Energy Crossovers in Nanocrystalline Zirconia

Michael W. Pitcher, Sergey V. Ushakov, Alexandra Navrotsky et al. · Journal of the American Ceramic Society · 2004 · 285 citations

Engineering, Chemistry, Ceramic Powders +16