Selective etching of p-GaN over Al0.25Ga0.75N in Cl2/Ar/O2 ICP plasma for fabrication of normally-off GaN HEMTs

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

Engineering, Electrical Engineering, Materials Science +17

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 998 citations

Engineering, Electrical Engineering, Materials Science +14

Gallium nitride devices for power electronic applications

B. Jayant Baliga · Semiconductor Science and Technology · 2013 · 608 citations

Engineering, Electrical Engineering, Materials Science +17

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai, Yugang Zhou, Kei May Lau et al. · IEEE Transactions on Electron Devices · 2006 · 524 citations

Engineering, Electrical Engineering, Physics +17

Review of technology for normally-off HEMTs with p-GaN gate

Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte · Materials Science in Semiconductor Processing · 2017 · 298 citations

Engineering, Electrical Engineering, Materials Science +13