Simulation Study of a Thyristor Conduction-Insulated Gate Bipolar Transistor (TC-IGBT) With a p-n-p Base and an n-p-n Collector for Reducing Turn-Off Loss

Abstract

This article proposes a thyristor conduction-insulated gate bipolar transistor (TC-IGBT) with a p-n-p base and an n-p-n collector to reduce turn-off loss. The parasitic p-collector/n-drift/floating p (FP)-layer/carrier stored (CS)-layer thyristor is activated by the double channel gate and the p-n-p base acts a hole barrier to increase hole concentration at the top side. The n-p-n collector is used for extracting electrons from the n-drift region to decrease hole concentration at the bottom side. Therefore, these two effects form linear and descending hole concentration distribution profile. As a result, the p-n-p base and the n-p-n collector in the TC-IGBT offers lower turn-off loss and turn-off fall time. TCAD numerical simulations show reductions up to 47% (3.15 mJ) and 52% (34 ns) in turn-off loss and turn-off fall time, respectively, when compared to a field stop (FS) IGBT with similar breakdown voltage, threshold voltage, and short circuit time. Therefore, this designed structure may be attractive for power electronics applications.