Concepedia

Junction Field-effect Transistors

Junction Field-Effect Transistors is a type of field-effect transistor in which the channel conductivity is modulated by a reverse-biased p-n junction that forms the gate terminal, distinguishing it from metal-oxide-semiconductor or insulated-gate variants through its use of a semiconductor junction for gate control.

400

Publications

17.6K

Citations

1.3K

Authors

370

Institutions

Publications per year

2017–2026

75

Variants

JfetJfetsJunction Field-effect Transistor

Parents

Publications

400

Junctionless multigate field-effect transistor

Chi‐Woo Lee, Aryan Afzalian, Nima Dehdashti Akhavan et al. · Applied Physics Letters · 2009 · 925 citations · Full text

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Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

Richard Martel, Vincent Derycke, C. Lavoie et al. · Physical Review Letters · 2001 · 797 citations

, , +17

Large-Signal Behavior of Junction Transistors

J. Ebers, J.L. Moll · Proceedings of the IRE · 1954 · 604 citations

, , +16

Junctionless Tunnel Field Effect Transistor

Bahniman Ghosh, Mohammad Waseem Akram · IEEE Electron Device Letters · 2013 · 395 citations

, , +16

Few-Layer MoS<sub>2</sub> <i>p</i>-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation

Ankur Nipane, Debjani Karmakar, Naveen Kaushik et al. · ACS Nano · 2016 · 391 citations

, , +16

1–5 of 400

Authors

1.3K

  1. MG
    Marius Grundmann

    Leipzig University, Germany

    7 publications · 244 citations

    7

    h-index

  2. HV
    Holger von Wenckstern

    Leipzig University, Germany

    6 publications · 197 citations

    6

    h-index

  3. MO
    Masahiko Ogura

    National Institute of Advanced Industrial Science and Technology, Japan

    5 publications · 307 citations

    5

    h-index

  4. TM
    Toshiharu Makino

    National Institute of Advanced Industrial Science and Technology, Japan

    5 publications · 307 citations

    5

    h-index

  5. SY
    Satoshi Yamasaki

    National Institute of Advanced Industrial Science and Technology, Japan

    5 publications · 307 citations

    5

    h-index

1–5 of 1.3K

Institutions

370

  1. General Electric (United States)

    Boston, United States

    10 h-index

    11 publications

    265 citations

  2. University of Electronic Science and Technology of China

    Chengdu, China

    8 h-index

    38 publications

    886 citations

  3. NTT (Japan)

    Tokyo, Japan

    7 h-index

    9 publications

    1.9K citations

  4. Leipzig University

    Leipzig, Germany

    7 h-index

    42 publications

    1.8K citations

  5. IBM (United States)

    Armonk, United States

    7 h-index

    12 publications

    428 citations

  6. University of Arkansas at Fayetteville

    Fayetteville, United States

    6 h-index

    15 publications

    314 citations

  7. University of Pavia

    Pavia, Italy

    6 h-index

    12 publications

    178 citations

  8. National Tsing Hua University

    Hsinchu, Taiwan

    6 h-index

    24 publications

    618 citations

1–8 of 370

Venues

  1. IEEE Transactions on Electron Devices

    51 publications · 1.8K citations

    23

    h-index

  2. IEEE Electron Device Letters

    35 publications · 1.4K citations

    20

    h-index

  3. Proceedings of the IRE

    22 publications · 2.1K citations

    17

    h-index

  4. Applied Physics Letters

    17 publications · 1.7K citations

    14

    h-index

  5. IEEE Transactions on Nuclear Science

    19 publications · 337 citations

    13

    h-index

1–5