Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process

A survey of Gallium Nitride HEMT for RF and high power applications

A.S. Augustine Fletcher, D. Nirmal · Superlattices and Microstructures · 2017 · 283 citations

Engineering, Electrical Engineering, Materials Science +14

Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials

Hideo Aida, Toshiro Doi, Hidetoshi Takeda et al. · Current Applied Physics · 2012 · 257 citations

Engineering, Materials Engineering, Materials Science +14

Application of Chemical Mechanical Polishing to the Fabrication of VLSI Circuit Interconnections

W. Patrick, W. L. Guthrie, C. L. Standley et al. · Journal of The Electrochemical Society · 1991 · 237 citations

Engineering, Electrical Engineering, Materials Science +17

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Kazuya Yamamura, Tatsuya Takiguchi, Masaki Ueda et al. · CIRP Annals · 2011 · 213 citations

Engineering, Materials Engineering, Materials Science +13

X-ray photoelectron spectroscopy investigation of boron carbide films deposited by sputtering

Luiz G. Jacobsohn, R. Schulze, M.E.H. Maia da Costa et al. · Surface Science · 2004 · 196 citations

Natural Sciences, Materials Engineering, Materials Science +10