Design of GaN/AlGaN/GaN Super-Heterojunction Schottky Diode

Abstract

We present a systematic study on the design of a novel GaN/AlGaN/GaN super-heterojunction Schottky diode. Through physics-based TCAD simulation, we discuss three important design aspects: 1) how to design a GaN/AlGaN/GaN structure to form a high-density 2-D electron gas and to scale it to multiple vertically stacked channels with less risk in reaching the critical thickness limited by the strain in epitaxy; 2) how to reach charge balance and how sensitive is the breakdown voltage with respect to the doping imbalance; and 3) how to ensure that the processes of depleting and accumulating electrons and holes in the structure are fast enough for practical power switching applications.