Concepedia

1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer

Ki‐Sik Im, Jin-Seok Choi, Young-Min Hwang, Sung Jin An, Jea-Seung Roh, Seung‐Hyeon Kang, J.‐H. Lee

Microelectronic Engineering · 2019 · 16 citations · 16 references

DOI

Concepts

References

16

Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors

G. Ghibaudo, O. Roux, Ch. Nguyen-Duc et al. · physica status solidi (a) · 1991 · 759 citations

, , +16

Semiconductor surface physics

C. Hilsum · Journal of Physics and Chemistry of Solids · 1958 · 616 citations

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

T. Paul Chow, R. Tyagi · IEEE Transactions on Electron Devices · 1994 · 483 citations

, , +14

What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs?

Lode K. J. Vandamme, F.N. Hooge · IEEE Transactions on Electron Devices · 2008 · 237 citations

, , +14

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

M. E. Levinshteĭn, Sergey Rumyantsev, R. Gaška et al. · Applied Physics Letters · 1998 · 104 citations

, , +17