Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Kenji Nomura, Hiromichi Ohta, Akihiro Takagi et al. · Nature · 2004 · 7.4K citations

Engineering, Electrical Engineering, Materials Science +16

Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

Akihiro Takagi, Kenji Nomura, Hiromichi Ohta et al. · Thin Solid Films · 2005 · 475 citations

Natural Sciences, Materials Science, Physics +16

Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor

Himchan Oh, Sung‐Min Yoon, Min Ki Ryu et al. · Applied Physics Letters · 2010 · 349 citations

Engineering, Electrical Engineering, Physics +17

Amorphous oxide channel TFTs

Hideya Kumomi, Kenji Nomura, Toshio Kamiya et al. · Thin Solid Films · 2007 · 180 citations

Natural Sciences, Electrical Engineering, Materials Science +12

Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

Te-Chih Chen, Ting‐Chang Chang, Tien‐Yu Hsieh et al. · Applied Physics Letters · 2010 · 106 citations

Engineering, Materials Engineering, Materials Science +17