Chengyuan Dong

Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers

Haiting Xie, Qi Wu, Ling Xu et al. · Applied Surface Science · 2016 · 54 citations

Materials Science, Electrical Engineering, Engineering +6

Development and analysis of nitrogen-doped amorphous InGaZnO thin film transistors

Haiting Xie, Jianeng Xu, Guochao Liu et al. · Materials Science in Semiconductor Processing · 2017 · 41 citations

Materials Science, Electrical Engineering, Engineering +5

The influence of RF power on the electrical properties of sputtered amorphous In—Ga—Zn—O thin films and devices

Junfei Shi, Chengyuan Dong, Wenjun Dai et al. · Journal of Semiconductors · 2013 · 39 citations

Thin Film Physics, Optical Materials, Engineering +16

Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors

Jie Wu, Yu‐Ting Chen, Daxiang Zhou et al. · Materials Science in Semiconductor Processing · 2014 · 32 citations

Materials Science, Electrical Engineering, Engineering +7

Subgap State Engineering Using Nitrogen Incorporation to Improve Reliability of Amorphous InGaZnO Thin-Film Transistors in Various Stressing Conditions

Gongtan Li, Runze Zhan, Bo‐Ru Yang et al. · IEEE Transactions on Electron Devices · 2016 · 22 citations

Materials Science, Electrical Engineering, Light Stress +13