Haiting Xie - Concepedia

Author

Haiting Xie

Shanghai Jiao Tong University

Also Known As

Haiting Xie

Publications

300

Citations

H-Index

Concepts

All Affiliations

Shanghai Jiao Tong University

About

Haiting Xie is an author at Shanghai Jiao Tong University specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	258
2	Applied Physics	11	11	258
3	Materials Science	11	11	258
4	Electrical Engineering	10	10	236
5	Materials Engineering	1	1	12

Haiting Xie

Publications

271

Citations

H-Index

Page 1

	Year	Citations
Nitrogen-doped amorphous oxide semiconductor thin film transistors with double-stacked channel layers Haiting Xie, Qi Wu, Ling Xu, Applied Surface Science Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsApplied Physics	2016	54
Development and analysis of nitrogen-doped amorphous InGaZnO thin film transistors Haiting Xie, Jianeng Xu, Guochao Liu, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsApplied Physics	2017	41
Sputtered oxides used for passivation layers of amorphous InGaZnO thin film transistors Jie Wu, Yu‐Ting Chen, Daxiang Zhou, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsPassivation Layers	2014	32
Improvements in passivation effect of amorphous InGaZnO thin film transistors Chengyuan Dong, Junfei Shi, Jie Wu, Materials Science in Semiconductor Processing Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringOxide Electronics	2014	26
Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors Haiting Xie, Yan Zhou, Ying Zhang, Results in Physics Materials ScienceOxygen VacancyChemical BondsNitrogen-doped Amorphous IngaznoEngineering	2018	22
Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers Haiting Xie, Guochao Liu, Lei Zhang, Applied Sciences Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2017	18
Amorphous InGaZnO thin film transistors with sputtered silver source/drain and gate electrodes Qi Wu, Ling Xu, Jianeng Xu, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringSemiconductor DeviceGate ElectrodesEngineering	2016	15
Light illumination stability of amorphous InGaZnO thin film transistors with sputtered AlO<i><sub>x</sub></i>passivation in various thicknesses Daxiang Zhou, Zhe Hu, Qi Wu, Japanese Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesThin Film Process TechnologyOxygen Vacancy	2014	13
Thermal stability of amorphous InGaZnO thin film transistors passivated by AlOx layers Zhe Hu, Daxiang Zhou, Ling Xu, Solid-State Electronics Materials ScienceElectrical EngineeringEngineeringOxide ElectronicsCompound Semiconductor	2014	13
Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers Ying Zhang, Haiting Xie, Chengyuan Dong Micromachines	2019	13

Page 1