Photoinduced Instability

Photoinduced Instability is a phenomenon in thin-film transistors characterized by the degradation of electrical performance due to the generation of charge traps or defect states under exposure to light, particularly in the presence of bias stress.

118

Publications

6.4K

Citations

541

Authors

165

Institutions

Publications per year

2017–2026

22

Authors

541

  1. JK
    Jae Kyeong Jeong

    Hanyang University, South Korea

    10 publications · 895 citations

    10

    h-index

  2. DF
    David F. O’Brien

    University of Arizona, United States

    5 publications · 334 citations

    5

    h-index

  3. RC
    Rino Choi

    Inha University, South Korea

    5 publications · 503 citations

    5

    h-index

  4. JS
    Ji Sim Jung

    Samsung (South Korea), South Korea

    4 publications · 212 citations

    4

    h-index

  5. KS
    Kyoung Seok Son

    Samsung (South Korea), South Korea

    4 publications · 276 citations

    4

    h-index

1–5 of 541

Venues

  1. Applied Physics Letters

    20 publications · 2K citations

    17

    h-index

  2. Journal of Non-Crystalline Solids

    8 publications · 119 citations

    8

    h-index

  3. Physical Review Letters

    PRL · 5 publications · 216 citations

    5

    h-index

  4. IEEE Electron Device Letters

    4 publications · 153 citations

    4

    h-index

  5. Applied Physics A

    3 publications · 66 citations

    3

    h-index

1–5