Photoinduced Instability
Photoinduced Instability is a phenomenon in thin-film transistors characterized by the degradation of electrical performance due to the generation of charge traps or defect states under exposure to light, particularly in the presence of bias stress.
118
Publications
6.4K
Citations
541
Authors
165
Institutions
Publications per year
2017–2026
22
Parents
118
Huogen Yu, Xiao Huang, Ping Wang et al. · The Journal of Physical Chemistry C · 2016 · 213 citations
Natural Sciences, Materials Engineering, Materials Science +17
1–5 of 118
541
10
h-index
5
h-index
5
h-index
4
h-index
4
h-index
1–5 of 541
165

Inha University
Incheon, South Korea
10 h-index
34 publications
3.3K citations
Samsung (South Korea)
Seoul, South Korea
9 h-index
42 publications
2.4K citations
University of Cambridge
Cambridge, United Kingdom
7 h-index
12 publications
443 citations
The University of Tokyo
Tokyo, Japan
5 h-index
17 publications
1.7K citations
Seoul National University
Seoul, South Korea
5 h-index
27 publications
1.4K citations
Electronics and Telecommunications Research Institute
Daejeon, South Korea
5 h-index
27 publications
2.8K citations
University of Arizona
Tucson, United States
4 h-index
14 publications
960 citations

Chinese Academy of Sciences
Beijing, China
3 h-index
16 publications
406 citations
1–8 of 165
20 publications · 2K citations
17
h-index
8 publications · 119 citations
8
h-index
PRL · 5 publications · 216 citations
5
h-index
4 publications · 153 citations
4
h-index
3 publications · 66 citations
3
h-index
1–5