Kwang Hwan Ji

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 293 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +14

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Kwang Hwan Ji, Yeon‐Gon Mo, Jong Han Jeong et al. · IEEE Electron Device Letters · 2010 · 181 citations

Thin-film Transistor, Engineering, Igzo Transistors +16

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Shinhyuk Yang, Kwang Hwan Ji, Un Ki Kim et al. · Applied Physics Letters · 2011 · 96 citations

Oxygen Vacancy, Electrical Engineering, Optical Materials +14

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Ji-In Kim, Kwang Hwan Ji, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 80 citations

Ultra-thin Insno Layer, Engineering, Optoelectronic Devices +17

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Journal of The Electrochemical Society · 2010 · 61 citations

Semiconductor Technology, Electrical Engineering, Experimental Observation +11