Ji-In Kim

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 293 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +14

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Ji-In Kim, Kwang Hwan Ji, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 80 citations

Ultra-thin Insno Layer, Engineering, Optoelectronic Devices +17

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Journal of The Electrochemical Society · 2010 · 61 citations

Semiconductor Technology, Electrical Engineering, Experimental Observation +11

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

Se Yeob Park, Kwang Hwan Ji, Hong Yoon Jung et al. · Applied Physics Letters · 2012 · 59 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +15

Ti-Doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge-Carrier Density and Crystalline Structure

Ji-In Kim, Kwang Hwan Ji, Mi Jang et al. · ACS Applied Materials & Interfaces · 2011 · 31 citations

Engineering, Organic Electronics, Optoelectronic Devices +18