Se Yeob Park

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 293 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +14

Role of incorporated hydrogen on performance and photo-bias instability of indium gallium zinc oxide thin film transistors

Hyo Jin Kim, Se Yeob Park, Hong Yoon Jung et al. · Journal of Physics D Applied Physics · 2012 · 80 citations

Electrical Engineering, Indium Gallium Zinc, Engineering +14

Improvement in both mobility and bias stability of ZnSnO transistors by inserting ultra-thin InSnO layer at the gate insulator/channel interface

Ji-In Kim, Kwang Hwan Ji, Hong Yoon Jung et al. · Applied Physics Letters · 2011 · 80 citations

Ultra-thin Insno Layer, Engineering, Optoelectronic Devices +17

Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Se Yeob Park, Cheol Seong Hwang, Hyeong Joon Kim et al. · IEEE Electron Device Letters · 2013 · 63 citations

Sub Xmlns, Engineering, Thin Film Process Technology +16

The Effect of Density-of-State on the Temperature and Gate Bias-Induced Instability of InGaZnO Thin Film Transistors

Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung et al. · Journal of The Electrochemical Society · 2010 · 61 citations

Semiconductor Technology, Electrical Engineering, Experimental Observation +11