IEEE Electron Device Letters · 2018 · 34 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationElectrostatic Discharge ProtectionProtection SystemsSemiconductor ReliabilityElectrostatic DischargeHigh-temperature PerformanceHigh-temperature StabilityProtectionThermal ReliabilityThermal Reliability Assessment
In this letter, we propose a 4H-SiC-based electrostatic discharge (ESD) protection circuitwith a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved floating technology to the 4H-SiC grounded-gate n-type metal-oxide-semiconductor (GGNMOS) for 70-V applications. Electrical characteristics of the 4H-SiC-based conventional GGNMOS, floating-body NMOS, and the proposed ESD protection circuit were compared and analyzed using the transmission-line pulse test. To verify the high-temperature characteristics of the proposed 4H-SiC-based ESD protection circuit, its thermal reliability was measured at high temperatures (300-500 K).
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