A compact model and TCAD simulation for GaN-gate injection transistor (GIT)

Spontaneous polarization and piezoelectric constants of III-V nitrides

Fabio Bernardini, Vincenzo Fiorentini, David Vanderbilt · Physical review. B, Condensed matter · 1997 · 3K citations · Full text

Natural Sciences, Materials Science, Physics +15

The physics and chemistry of the Schottky barrier height

R. T. Tung · Applied Physics Reviews · 2014 · 1.4K citations · Full text

Natural Sciences, Materials Science, Physics +17

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Edward A. Jones, Fred Wang, Daniel Costinett · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2016 · 1.2K citations

Engineering, Electrical Engineering, Materials Science +17

Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno et al. · IEEE Transactions on Electron Devices · 2007 · 998 citations

Engineering, Electrical Engineering, Materials Science +14

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2006 · 560 citations

Engineering, Electrical Engineering, Materials Engineering +17