Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests

Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Tian‐Li Wu, Benoit Bakeroot, Hu Liang et al. · IEEE Electron Device Letters · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Science +17

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

François Fouquet, Pascal Dherbécourt, Malek Masmoudi et al. · Microelectronics Reliability · 2016 · 30 citations

Engineering, Electrical Engineering, Aging +15

[131] Experimental study of the short-circuit robustness of 600V E-mode GaN transistors

Matthieu Landel, Cyrille Gautier, Denis Labrousse et al. · Microelectronics Reliability · 2016 · 29 citations

Engineering, Electrical Engineering, Materials Science +14

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

Sungyoung Song, Stig Munk‐Nielsen, Christian Uhrenfeldt et al. · 2017 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

C. Abbate, G. Busatto, A. Sanseverino et al. · Microelectronics Reliability · 2017 · 20 citations

Engineering, Electrical Engineering, Materials Science +16