C. Abbate - Concepedia

Author

C. Abbate

Università degli studi di Cassino e del Lazio Meridionale

Also Known As

C Abbate, C. ABBATE, C. Abbate, Carmine Abbate

Publications

846

Citations

H-Index

Concepts

All Affiliations

Università degli studi di Cassino e del Lazio Meridionale Ansaldo (Italy)University of Padua University of Parma Istituto Nazionale di Fisica Nucleare, Sezione di Roma I

About

C. Abbate is an author at Università degli studi di Cassino e del Lazio Meridionale specializing in engineering, electrical engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	693
2	Electrical Engineering	15	23	693
3	Applied Physics	9	9	353
4	Physics	2	2	91
5	Computer Engineering	1	1	13

C. Abbate

Publications

713

Citations

H-Index

Page 1

	Year	Citations
High-Voltage, High-Performance Switch Using Series-Connected IGBTs C. Abbate, G. Busatto, Francesco Iannuzzo IEEE Transactions on Power Electronics Electrical EngineeringEngineeringHigh Voltage EngineeringPower DevicePower Electronics Converter	2010	95
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I C. Abbate, G. Busatto, D. Tedesco, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsStress-induced Leakage Current	2019	78
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II C. Abbate, G. Busatto, D. Tedesco, IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringSemiconductor DeviceNanoelectronics	2019	64
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes C. Abbate, G. Busatto, P. Cova, IEEE Transactions on Nuclear Science SemiconductorsSemiconductor TechnologyElectrical EngineeringSic Schottky DiodesEngineering	2015	60
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT C. Abbate, G. Busatto, Francesco Iannuzzo, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	2015	57
Series connection of high power IGBT modules for traction applications C. Abbate, G. Busa, L. Fratelli, Dissipated EnergyElectrical EngineeringEngineeringPower DevicePower Electronics Converter	2005	37
Thermal damage in SiC Schottky diodes induced by SE heavy ions C. Abbate, G. Busatto, P. Cova, Microelectronics Reliability Electrical EngineeringSic Schottky DiodesEngineeringIon ImplantationPhysics	2014	34
EMI Characterisation of high power IGBT modules for Traction Application G. Busatto, C. Abbate, Francesco Iannuzzo, Electrical EngineeringEngineeringPower DeviceIgbt ModulesAppropriate Igbt Model	2006	30
Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit C. Abbate, G. Busatto, A. Sanseverino, Microelectronics Reliability Electrical EngineeringEngineeringPower DevicePower Semiconductor DeviceGan Power Device	2019	27
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests C. Abbate, G. Busatto, A. Sanseverino, Microelectronics Reliability Electrical EngineeringEngineeringShort Circuit TestsPower Semiconductor DeviceFailure Analysis	2018	23

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