Concepedia

Author

D. Tedesco

Università degli studi di Cassino e del Lazio Meridionale

Also Known As

D. Tedesco, Davide Tedesco

11

Publications

295

Citations

7

H-Index

9

Concepts

All Affiliations

Università degli studi di Cassino e del Lazio MeridionaleUniversity of PaduaIstituto Nazionale di Fisica Nucleare, Galileo Galilei Institute for Theoretical Physics
DT

About

D. Tedesco is an author at Università degli studi di Cassino e del Lazio Meridionale specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

7

7

287

2

Electrical Engineering

7

7

287

3

Applied Physics

4

4

219

4

Microelectronics

3

3

169

5

Physics

1

1

57

D. Tedesco

×

7

Publications

287

Citations

7

H-Index

YearCitations

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I

C. Abbate, G. Busatto, D. Tedesco,

IEEE Transactions on Electron Devices

2019

78

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II

C. Abbate, G. Busatto, D. Tedesco,

IEEE Transactions on Electron Devices

2019

64

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto, Francesco Iannuzzo,

Microelectronics Reliability

2015

57

Failure mechanisms of enhancement mode GaN power HEMTs operated in short circuit

C. Abbate, G. Busatto, A. Sanseverino,

Microelectronics Reliability

2019

27

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

C. Abbate, G. Busatto, A. Sanseverino,

Microelectronics Reliability

2018

23

Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

C. Abbate, G. Busatto, A. Sanseverino,

Microelectronics Reliability

2017

20

Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation

C. Abbate, G. Busatto, S. Mattiazzo,

Microelectronics Reliability

2018

18

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