Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

The early history of the high electron mobility transistor (HEMT)

T. Mimura · IEEE Transactions on Microwave Theory and Techniques · 2002 · 155 citations

Engineering, Electrical Engineering, Materials Science +13

Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

S. Kuboyama, Akifumi Maru, H. Shindou et al. · IEEE Transactions on Nuclear Science · 2011 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs

Shinobu Onoda, A. Hasuike, Yoshitaka Nabeshima et al. · IEEE Transactions on Nuclear Science · 2013 · 88 citations

Engineering, Electrical Engineering, Materials Science +15

Determination of Single-Event Effect Application Requirements for Enhancement Mode Gallium Nitride HEMTs for Use in Power Distribution Circuits

Leif Scheick · IEEE Transactions on Nuclear Science · 2014 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

C. Abbate, G. Busatto, P. Cova et al. · IEEE Transactions on Nuclear Science · 2015 · 61 citations

Engineering, Electrical Engineering, Materials Science +17