F. Velardi - Concepedia

Author

F. Velardi

Università degli studi di Cassino e del Lazio Meridionale ORCID

Also Known As

F Velardi, F. VELARDI, F. Velardi, Francesco Velardi, Izzi, M.

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Università degli studi di Cassino e del Lazio Meridionale University of Padua Istituto Nazionale di Fisica Nucleare, Sezione di Roma I University of Parma Istituto Nazionale di Fisica Nucleare, Sezione di Pavia

About

F. Velardi is an author at Università degli studi di Cassino e del Lazio Meridionale specializing in engineering, electrical engineering, and power electronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	24	803
2	Applied Physics	10	10	370
3	Computer Engineering	3	3	49
4	Education	1	1	15
5	Medicine	1	1	228

F. Velardi

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
A survey of the first complication of newly implanted CSF shunt devices for the treatment of nontumoral hydrocephalus Concezio Di Rocco, Enrico Marchese, F. Velardi Child s Nervous System First ComplicationCsf Shunt DevicesPediatric HydrocephalusCerebrospinal FluidNontumoral Hydrocephalus	1994	228
Identification and compensation of Preisach hysteresis models for magnetostrictive actuators Ciro Natale, F. Velardi, C. Visone Physica B Condensed Matter MagnetismEngineeringMechanical ControlMechanical EngineeringMechatronics	2001	150
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I C. Abbate, G. Busatto, D. Tedesco, IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringNanoelectronicsStress-induced Leakage Current	2019	78
Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II C. Abbate, G. Busatto, D. Tedesco, IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringSemiconductor DeviceNanoelectronics	2019	64
Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes C. Abbate, G. Busatto, P. Cova, IEEE Transactions on Nuclear Science SemiconductorsSemiconductor TechnologyElectrical EngineeringSic Schottky DiodesEngineering	2015	60
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT C. Abbate, G. Busatto, Francesco Iannuzzo, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	2015	57
High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives Seyed Abolfazl Mortazavizadeh, Simone Palazzo, Arturo Amendola, Applied Sciences Converter StructureElectrical EngineeringEngineeringPower DevicePower Devices	2021	35
Thermal damage in SiC Schottky diodes induced by SE heavy ions C. Abbate, G. Busatto, P. Cova, Microelectronics Reliability Electrical EngineeringSic Schottky DiodesEngineeringIon ImplantationPhysics	2014	34
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET G. Busatto, A. Porzio, F. Velardi, Microelectronics Reliability Device ModelingElectrical EngineeringPower MosfetEngineeringBias Temperature Instability	2005	30
Modelling and compensation of hysteresis for magnetostrictive actuators Ciro Natale, F. Velardi, C. Visone Everett IntegralsEngineeringFuzzy ModelingMechanical EngineeringFuzzy Control System	2002	28

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