A. Sanseverino

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I

C. Abbate, G. Busatto, D. Tedesco et al. · IEEE Transactions on Electron Devices · 2019 · 78 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II

C. Abbate, G. Busatto, D. Tedesco et al. · IEEE Transactions on Electron Devices · 2019 · 64 citations

Electrical Engineering, Ion Implantation, Engineering +14

Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes

C. Abbate, G. Busatto, P. Cova et al. · IEEE Transactions on Nuclear Science · 2015 · 60 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

C. Abbate, G. Busatto, Francesco Iannuzzo et al. · Microelectronics Reliability · 2015 · 57 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives

Seyed Abolfazl Mortazavizadeh, Simone Palazzo, Arturo Amendola et al. · Applied Sciences · 2021 · 35 citations · Full text

Converter Structure, Electrical Engineering, Engineering +15