Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit - Concepedia

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Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit

20

Citations

18

References

2017

Year

C. Abbate, G. Busatto, A. Sanseverino, D. Tedesco, F. Velardi

Microelectronics Reliability

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsExperimental StudyGan Power DeviceShort CircuitCategoryiii-v Semiconductor

References

	Year	Citations

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