Applied Physics Express · 2018 · 14 citations · 27 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignIii-v SemiconductorsIntegrated Circuit DesignIntegrated Circuit FabricationSemiconductor Device MaterialsThin Film AnnealingAnnealing EffectsCmos Fabrication ProcessesDevice FabricationFabricationGrain Growth MechanismsSubthreshold SwingValence BandWork Function
A p-type polycrystalline Ge (poly-Ge) film processed by UV and CO2 laser annealing reduces the hole concentration from 6 × 1018 to 2 × 1016 cm−3, accompanied by poly-grain growth. The decrease in hole concentration arises from the defect annealing using a CO2 laser, as demonstrated by the changes in the work function, that is, the valence-band maximum (VBM). The laser processes reduce the thermal budget for the fabrication of an enhancement-mode poly-Ge nMOSFET, which has a Ion/Ioff ratio of 5 × 103, a Vth of 2 V, and a subthreshold swing of 250 mV/dec., and will be potential fabrication methods for monolithic 3D integrated circuits in the future.
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Fermi level, work function and vacuum level
Antoine Kahn · Materials Horizons · 2015 · 1K citations
Advances, challenges and opportunities in 3D CMOS sequential integration
P. Batude, M. Vinet, B. Prévitali et al. · 2011 · 148 citations · Full text