Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Yasuo Koide et al. · Journal of Crystal Growth · 1989 · 688 citations

Engineering, Materials Engineering, Materials Science +13

Growth defects in GaN films on sapphire: The probable origin of threading dislocations

X. J. Ning, F. R. Chien, P. Pirouz et al. · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 326 citations

Natural Sciences, Materials Engineering, Materials Science +15

Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy

Weijin Qian, Marek Skowroński, Marc De Graef et al. · Applied Physics Letters · 1995 · 284 citations

Natural Sciences, Materials Engineering, Materials Science +17

Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

Tyler J. Grassman, Mark Brenner, S. Rajagopalan et al. · Applied Physics Letters · 2009 · 152 citations

Natural Sciences, Materials Engineering, Materials Science +17

Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates

Yasufumi Takagi, H. Yonezu, Katsuya Samonji et al. · Journal of Crystal Growth · 1998 · 116 citations

Engineering, Materials Engineering, Materials Science +16