Katsuya Samonji

Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates

Yasufumi Takagi, H. Yonezu, Katsuya Samonji et al. · Journal of Crystal Growth · 1998 · 116 citations

Materials Science, Gap Layers, Engineering +8

Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

Yuzo Furukawa, H. Yonezu, Kaoru Ojima et al. · Japanese Journal of Applied Physics · 2002 · 70 citations

Materials Science, Materials Engineering, N Content +14

Reduction of threading dislocation density in InP-on-Si heteroepitaxy with strained short-period superlattices

Katsuya Samonji, H. Yonezu, Yasufumi Takagi et al. · Applied Physics Letters · 1996 · 61 citations

Engineering, Semiconductor Nanostructures, Semiconductors +17

Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers

J. Luyo-Alvarado, M. Meléndez‐Lira, M. López‐López et al. · Journal of Applied Physics · 1998 · 53 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs

Katsuya Samonji, H. Yonezu, Yasufumi Takagi et al. · Journal of Applied Physics · 1999 · 35 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +13