M. López‐López - Concepedia

Author

M. López‐López

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional ORCID

Also Known As

I. Martínez-velis, López López, María, López López, Máximo, M Lopez-Lopez, M López, M López-López, M. Lopez, M. Lopez-Lopez, M. Lopez‐Lopez, M. Lopéz-Lopéz

265

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional Instituto Politécnico Nacional Universidad Nacional Autónoma de México Toyohashi University of Technology Tecnológico Nacional de México

About

M. López‐López is an author at Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	39	773
2	Applied Physics	16	40	784
3	Electrical Engineering	13	19	377
4	Materials Engineering	4	4	50
5	Chemistry	1	1	12

M. López‐López

Publications

867

Citations

H-Index

Page 1

	Year	Citations
GaAs surface oxide desorption by annealing in ultra high vacuum A. Guillén-Cervantes, Z. Rivera-Álvarez, M. López‐López, Thin Solid Films SemiconductorsElectrical EngineeringEngineeringPhysicsSurface Science	2000	65
Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers J. Luyo-Alvarado, M. Meléndez‐Lira, M. López‐López, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1998	53
Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport G. Santana, O. de Melo, J. Aguilar‐Hernández, Materials Wide-bandgap SemiconductorEngineeringOptical PropertiesNanoelectronicsBand Gap Energy	2013	51
Surface diffusion length of Ga adatoms in molecular-beam epitaxy on GaAs(100)–(110) facet structures M. López‐López, Yasuhiko Nomura Journal of Crystal Growth Materials ScienceMolecular-beam EpitaxyEngineeringSurface Diffusion LengthSurface Science	1995	50
Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition Marko Milojević, R. Contreras‐Guerrero, M. López‐López, Applied Physics Letters Materials ScienceOxide HeterostructuresSurface CharacterizationEngineeringOxide Electronics	2009	45
Study of the heavily p-type doping of cubic GaN with Mg Carlos A. Hernández‐Gutiérrez, Y.L. Casallas-Moreno, Victor-Tapio Rangel-Kuoppa, Scientific Reports	2020	45
Molecular Beam Epitaxy of GaAs/AlAs on Mesa Stripes along the [001] Direction for Quantum-Wire Fabrication M. López‐López, Tomonori Ishikawa, Y. Nomura Japanese Journal of Applied Physics Materials ScienceSemiconductorsGaas GrowthEngineeringPhysics	1993	33
Realization of mirror surface in (111)- and (110)-oriented GaAs by migration-enhanced epitaxy Yasushi Takano, M. López‐López, T. Torihata, Journal of Crystal Growth Electrical EngineeringEpitaxial GrowthEngineeringNanoelectronicsCompound Semiconductor	1991	27
Initial Growth Mechanism of GaAs on Si(110) M. López‐López, Takashi Ikei, Yasushi Takano, Japanese Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	1990	24
Hillocks formation during the molecular beam epitaxial growth of ZnSe on GaAs substrates M. López‐López, A. Guillén-Cervantes, Z. Rivera-Álvarez, Journal of Crystal Growth Materials ScienceIi-vi SemiconductorEngineeringGaas SubstratesApplied Physics	1998	24

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