R. Contreras‐Guerrero

Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition

Marko Milojević, R. Contreras‐Guerrero, M. López‐López et al. · Applied Physics Letters · 2009 · 45 citations

Materials Science, Oxide Heterostructures, Surface Characterization +12

Properties of epitaxial BaTiO3 deposited on GaAs

R. Contreras‐Guerrero, Joshua P. Veazey, Jeremy Levy et al. · Applied Physics Letters · 2013 · 44 citations

Oxide Heterostructures, Materials Science, Oxide Film +14

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos et al. · Applied Physics Letters · 2013 · 35 citations

Wide-bandgap Semiconductor, Engineering, Cm−2 Ev−1 +16

Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs

Qiao Qiao, Yuyang Zhang, R. Contreras‐Guerrero et al. · Applied Physics Letters · 2015 · 32 citations · Full text

Engineering, Optoelectronic Devices, Oxygen-vacancy-enhanced Polarization +17

Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm<sup>2</sup> peak current density to enhance TFET drive current

D. Pawlik, Brian Romanczyk, Paul M. Thomas et al. · 2012 · 31 citations

Semiconductors, Td Performance, Electrical Engineering +12