Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(1 0 0) substrates

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +17

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Akitoshi Ishizaka, Y. Shiraki · Journal of The Electrochemical Society · 1986 · 1.6K citations

Engineering, Materials Engineering, Materials Science +17

Generation of misfit dislocations in semiconductors

P. M. J. Marée, J. C. Barbour, J. F. van der Veen et al. · Journal of Applied Physics · 1987 · 474 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

J. Petruzzello, B. Greenberg, D. A. Cammack et al. · Journal of Applied Physics · 1988 · 155 citations

Natural Sciences, Materials Engineering, Materials Science +17

First-principles study of sulfur passivation of GaAs(001) surfaces

Takahisa Ohno, Kenji Shiraishi · Physical review. B, Condensed matter · 1990 · 152 citations

Natural Sciences, Materials Engineering, Materials Science +17