Impact of interfacial layer using ultra-thin SiO2 on electrical and structural characteristics of Gd2O3 MOS capacitor

High-K materials and metal gates for CMOS applications

John Robertson, Robert M. Wallace · Materials Science and Engineering R Reports · 2014 · 766 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

A single-frequency approximation for interface-state density determination

Winfield Hill, C. C. Coleman · Solid-State Electronics · 1980 · 735 citations

Natural Sciences, Chemistry, Materials Science +14

Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

Laegu Kang, Byoung Hun Lee, Wenjie Qi et al. · IEEE Electron Device Letters · 2000 · 241 citations

Engineering, Electrical Engineering, Materials Science +17

MOS interface states: overview and physicochemical perspective

Edward H. Poindexter · Semiconductor Science and Technology · 1989 · 230 citations

Engineering, Electrical Engineering, Materials Science +17

Comparison between SiOC Thin Film by plasma enhance chemical vapor deposition and SiO2 Thin Film by Fourier Transform Infrared Spectroscopy

Teresa Oh, Chi Kyu Choi · Journal of the Korean Physical Society · 2010 · 230 citations

Natural Sciences, Materials Engineering, Materials Science +13