The resistive switching characteristics of Ni-doped HfO film and its application as a synapse

Nanoionics-based resistive switching memories

Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations

Natural Sciences, Materials Engineering, Materials Science +12

Hafnium and zirconium silicates for advanced gate dielectrics

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2000 · 972 citations

Engineering, Materials Engineering, Materials Science +17

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

Shimeng Yu, Yi Wu, Rakesh Jeyasingh et al. · IEEE Transactions on Electron Devices · 2011 · 806 citations

Engineering, Electrical Engineering, Materials Science +13

A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

Shimeng Yu, Bin Gao, Zheng Fang et al. · Advanced Materials · 2013 · 526 citations · Full text

Engineering, Computer Engineering, Neural Engineering +12

Origin of the threshold voltage instability in SiO₂/HfO₂ dual layer gate dielectrics

A. Kerber, E. Cartier, L. Pantisano et al. · IEEE Electron Device Letters · 2003 · 360 citations

Engineering, Electrical Engineering, Materials Science +17